Bouhouche Manel
Nom : Bouhouche
Prénom : Manel
Grade : MCA
Email : bouhouche.manel@univ-oeb.dz
Publications:
Les dernières publications:
Phase noise modeling in LC oscillators implemented in SiGe technology
Effect of implantation defects and carbon incorporation on Si/SiGe bipolar characteristics
Mixed-mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals
- Christian Gontrand, Manel Bouhouche, JoséCruzNuñez Perez, Olivier Valorge, Francis Calmon, Jacques Verdierand SaïdaLatreche, “ Mixed-mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals”, Wiley International Journal of Numerical Modelling: electronic networks and fields, 22 Issue 1, January 2009, pp. 23-42 www.interscience.wiley.com
- José-Cruz Nunez-Perez, Maya Lakhdara, Manel Bouhouche, Jacques Verdier, SaidaLatreche and Christian Gontrand, “First- and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors”, International journalof Semiconductor Science and Technology; Semicond. Sci. Technol. Vol.24, Issue 4, 6 March 2009. http://iopscience.iop.org/ 0268-1242/24/4/045010
- Latreche, M. LAKHDARA, M. Bouhouche, C. Gontrand, « Low temperature effect on electrical characteristics of SiGe, SiGeC HBT”, Journal of optoelectronics and advanced materials – symposia, Vol. 1, No.3, pp. 242 –245,2009 .
- Bouhouche, S. Latreche, C. Gontrand, ’Low Frequency Noise in SiGe Bipolar Transistor: Effect of Extrinsic Base Implantation Traps’, International Journal of Computer Applications, Vol. 33, No. 6, November 2011, pp.59-64, DOI. 10.5120/4147-5874, http://www.ijcaonline.org/archives/ volume33/ number 6 /4147-5874.
- Bouhouche, S. Latreche, C. Gontrand, “Phase Noise Modeling in LC Oscillators Implemented in SiGe Technology”, Journal of semiconductors, Vol. 34, Issue 2, février 2013, DOI: 10.1088/1674-4926/34/2/025001, http://iopscience.iop.org/1674-4926/34/2/025001
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