{"id":1191,"date":"2023-09-03T13:21:23","date_gmt":"2023-09-03T13:21:23","guid":{"rendered":"http:\/\/www.univ-oeb.dz\/ista\/?page_id=1191"},"modified":"2023-09-03T13:21:25","modified_gmt":"2023-09-03T13:21:25","slug":"%d9%85%d8%b1%d8%b2%d9%88%d9%82%d9%8a-%d8%a3%d9%85%d9%8a%d9%86%d8%a9","status":"publish","type":"page","link":"https:\/\/www.univ-oeb.dz\/ista\/%d9%85%d8%b1%d8%b2%d9%88%d9%82%d9%8a-%d8%a3%d9%85%d9%8a%d9%86%d8%a9\/","title":{"rendered":"\u0645\u0631\u0632\u0648\u0642\u064a \u0623\u0645\u064a\u0646\u0629"},"content":{"rendered":"\n

\u0645\u0631\u0632\u0648\u0642\u064a \u0623\u0645\u064a\u0646\u0629<\/strong><\/p>\n\n\n\n

\u0627\u0644\u0633\u064a\u0631\u0629 \u0627\u0644\u0630\u0627\u062a\u064a\u0629<\/a><\/strong><\/p>\n\n\n\n

Grade <\/strong>: MCA<\/p>\n\n\n\n

Email<\/strong> : merzougui.amina@univ-oeb.dz<\/a><\/p>\n\n\n\n

\n

\u0627\u0644\u0645\u0646\u0634\u0648\u0631\u0627\u062a:<\/strong><\/h3>\n<\/blockquote>\n\n\n\n

Communications internationales ( Apr\u00e8s doctorat) :<\/u><\/strong><\/p>\n\n\n\n

[1] <\/strong>A. Merzougui<\/u><\/strong>,<\/strong> S. Latr\u00e8che, S, Bouchekouf, \u00ab Etude des caract\u00e9ristiques C (V) de capacit\u00e9s \u00e0 base d\u2019oxydes high-k et semi-conducteurs \u00e0 forte mobilit\u00e9. \u00ab , Deuxi\u00e8me Congr\u00e8s International sur les Nouveaux Mat\u00e9riaux et les Composants Actifs, Oum el Bouaghi,  Alg\u00e9rie, 25, 26 Juin, 2014.<\/p>\n\n\n\n

[2] <\/strong>S, Bouchekouf, M, Marir, A. Merzougui<\/u><\/strong>, F, Kebaili,  \u00ab Mod\u00e9lisation du photocourant dans la cellule organique  \u00ab , Deuxi\u00e8me Congr\u00e8s International sur les Nouveaux Mat\u00e9riaux et les Composants Actifs, Oum el Bouaghi,  Alg\u00e9rie, 25, 26 Juin, 2014.<\/p>\n\n\n\n

[3]<\/strong> A, Merzougui<\/u><\/strong> , S. Latreche , S. Bouchekouf, \u00ab Simulation of Capacitance-Voltage C (V) and Current- Voltages I(V) characteristics of a MOS capacity with double and tri-layer high permittivity gate oxide\u201d, Internationnal Electrical & Electronics Engineering and Technologies conferences ELECTROTECH\u201915, Istambul, Turkey, October 2-3, 2015.<\/p>\n\n\n\n

[4] <\/strong>A, Merzougui<\/u><\/strong> , S. Latreche , S. Bouchekouf , M. Zaabat, \u00ab Int\u00e9r\u00eat des oxydes \u00e0 fortes permitivit\u00e9s dans les structures MOS: Analyse des caract\u00e9risques C(V) et I(V) \u00bb, 2\u00e8me <\/sup> Conf\u00e9rence Internationale de l\u2019Electronique, Electrotechnique, Automatique et de Maintenance CIEEAM 2015, Oran, 24 \u2013 25 Novembre 2015.<\/p>\n\n\n\n

[5] <\/strong>A, Merzougui<\/u><\/strong> , S. Latreche , M. Zaabat, \u00ab Influence of interface states in MOS structures: Analysis of Capacitance-Voltage characteristics \u00bb, International conference on advanced material technologies (ICAMT)<\/strong>, India, 27 \u2013 28 December 2016.<\/p>\n\n\n\n

Publication ( Apr\u00e8s Doctorat) :<\/u><\/strong><\/p>\n\n\n\n

[1] <\/strong>A. Merzougui<\/u><\/strong>,<\/strong> S. Latr\u00e8che, S, Bouchekouf, \u00ab Etude des caract\u00e9ristiques C (V) de capacit\u00e9s \u00e0 base d\u2019oxydes high-k et semi-conducteurs \u00e0 forte mobilit\u00e9. \u00ab , Journal of new technology and materials (JNTM). Vol : 5, N\u00b0 :1, Juin 2015.<\/p>\n\n\n\n

[2] <\/strong>S, Bouchekouf, M, Marir, A. Merzougui<\/u><\/strong>, F, Kebaili,  \u00ab Mod\u00e9lisation du photocourant dans la cellule organique  \u00ab , Journal of new technology and materials (JNTM) Vol : 4, N\u00b0 :2, D\u00e9cembre 2014.<\/p>\n\n\n\n

<\/p>\n","protected":false},"excerpt":{"rendered":"

\u0645\u0631\u0632\u0648\u0642\u064a \u0623\u0645\u064a\u0646\u0629 \u0627\u0644\u0633\u064a\u0631\u0629 \u0627\u0644\u0630\u0627\u062a\u064a\u0629 Grade : MCA Email : merzougui.amina@univ-oeb.dz \u0627\u0644\u0645\u0646\u0634\u0648\u0631\u0627\u062a: Communications internationales ( Apr\u00e8s doctorat) : [1] A. Merzougui, S. Latr\u00e8che, S, Bouchekouf, \u00ab Etude des caract\u00e9ristiques C (V) de capacit\u00e9s \u00e0 base d\u2019oxydes high-k et semi-conducteurs \u00e0 forte mobilit\u00e9. \u00ab , Deuxi\u00e8me Congr\u00e8s International sur les Nouveaux Mat\u00e9riaux et les Composants Actifs, Oum el Bouaghi,  Alg\u00e9rie, 25, 26 Juin, 2014. [2] S, Bouchekouf, M, Marir, A. Merzougui, F, Kebaili,  \u00ab Mod\u00e9lisation du photocourant dans la cellule organique  \u00ab , Deuxi\u00e8me Congr\u00e8s International sur les Nouveaux Mat\u00e9riaux et les Composants Actifs, Oum el Bouaghi,  Alg\u00e9rie, 25, 26 Juin, 2014. [3] A, Merzougui , S. Latreche , S. Bouchekouf, \u00ab Simulation of Capacitance-Voltage C (V) and Current- Voltages I(V) characteristics of a MOS capacity with double and tri-layer high permittivity gate oxide\u201d, Internationnal Electrical & Electronics Engineering and Technologies conferences ELECTROTECH\u201915, Istambul, Turkey, October 2-3, 2015. [4] A, Merzougui , S. Latreche , S. Bouchekouf , M. Zaabat, \u00ab Int\u00e9r\u00eat des oxydes \u00e0 fortes permitivit\u00e9s dans les structures MOS: Analyse des caract\u00e9risques C(V) et I(V) \u00bb, 2\u00e8me  Conf\u00e9rence Internationale de l\u2019Electronique, Electrotechnique, Automatique et de Maintenance CIEEAM 2015, Oran, 24 \u2013 25 Novembre 2015. [5] A, Merzougui , S. Latreche , M. Zaabat, \u00ab Influence of interface states in MOS structures: Analysis of Capacitance-Voltage characteristics \u00bb, International conference on advanced material technologies (ICAMT), India, 27 \u2013 28 December 2016. Publication ( Apr\u00e8s Doctorat) : [1] A. Merzougui, S. Latr\u00e8che, S, Bouchekouf, \u00ab Etude des caract\u00e9ristiques C (V) de capacit\u00e9s \u00e0 base d\u2019oxydes high-k et semi-conducteurs \u00e0 forte mobilit\u00e9. \u00ab , Journal of new technology and materials (JNTM). Vol : 5, N\u00b0 :1, Juin 2015. [2] S, Bouchekouf, M, Marir, A. Merzougui, F, Kebaili,  \u00ab Mod\u00e9lisation du photocourant dans la cellule organique  \u00ab , Journal of new technology and materials (JNTM) Vol : 4, N\u00b0 :2, D\u00e9cembre 2014.<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-1191","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/pages\/1191"}],"collection":[{"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/comments?post=1191"}],"version-history":[{"count":1,"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/pages\/1191\/revisions"}],"predecessor-version":[{"id":1193,"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/pages\/1191\/revisions\/1193"}],"wp:attachment":[{"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/media?parent=1191"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}