{"id":1075,"date":"2023-09-03T10:12:42","date_gmt":"2023-09-03T10:12:42","guid":{"rendered":"http:\/\/www.univ-oeb.dz\/ista\/?page_id=1075"},"modified":"2023-09-03T10:12:43","modified_gmt":"2023-09-03T10:12:43","slug":"%d8%a8%d9%88%d8%ad%d9%88%d8%b4-%d9%85%d9%86%d8%a7%d9%84","status":"publish","type":"page","link":"https:\/\/www.univ-oeb.dz\/ista\/%d8%a8%d9%88%d8%ad%d9%88%d8%b4-%d9%85%d9%86%d8%a7%d9%84\/","title":{"rendered":"\u0628\u0648\u062d\u0648\u0634 \u0645\u0646\u0627\u0644"},"content":{"rendered":"\n<p class=\"has-text-align-right\"><strong>\u0628\u0648\u062d\u0648\u0634 \u0645\u0646\u0627\u0644<\/strong><\/p>\n\n\n\n<p class=\"has-text-align-right\"><strong><a href=\"https:\/\/www.univ-oeb.dz\/ista\/wp-content\/uploads\/2023\/09\/CV-Bouhouche.pdf\" target=\"_blank\" rel=\"noreferrer noopener\">\u0627\u0644\u0633\u064a\u0631\u0629 \u0627\u0644\u0630\u0627\u062a\u064a\u0629<\/a><\/strong><\/p>\n\n\n\n<p class=\"has-text-align-right\"><strong>Grade&nbsp;<\/strong>: MCA<\/p>\n\n\n\n<p class=\"has-text-align-right\"><strong>Email<\/strong>&nbsp;:&nbsp;<a href=\"mailto:bouhouche.manel@univ-oeb.dz\">bouhouche.manel@univ-oeb.dz<\/a><\/p>\n\n\n\n<blockquote class=\"wp-block-quote is-layout-flow wp-block-quote-is-layout-flow\">\n<h3 class=\"has-text-align-right wp-block-heading\"><strong>\u0627\u0644\u0645\u0646\u0634\u0648\u0631\u0627\u062a:<\/strong><\/h3>\n\n\n\n<p><strong>Les derni\u00e8res publications:<\/strong><\/p>\n\n\n\n<p>Phase noise modeling in LC oscillators implemented in SiGe technology<\/p>\n\n\n\n<p>Effect of implantation defects and carbon incorporation on Si\/SiGe bipolar characteristics<\/p>\n\n\n\n<p>Mixed-mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals<\/p>\n<\/blockquote>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Christian Gontrand,&nbsp;<strong>Manel Bouhouche<\/strong>, Jos\u00e9CruzNu\u00f1ez Perez, Olivier Valorge, Francis Calmon, Jacques Verdierand Sa\u00efdaLatreche, \u201c&nbsp;Mixed-mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals\u201d,&nbsp;<a href=\"http:\/\/www3.interscience.wiley.com\/journal\/4673\/home\">Wiley International Journal of Numerical Modelling: electronic networks and fields,<\/a>&nbsp;22 Issue 1, January 2009, pp. 23-42&nbsp;<a href=\"http:\/\/www.interscience.wiley.com\/\">www.interscience.wiley.com<\/a><\/li>\n\n\n\n<li>Jos\u00e9-Cruz Nunez-Perez, Maya Lakhdara,&nbsp;<strong>Manel Bouhouche<\/strong>, Jacques Verdier, SaidaLatreche and Christian Gontrand, \u201cFirst- and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors\u201d, International&nbsp;<strong>journal<\/strong>of Semiconductor Science and Technology; Semicond. Sci. Technol. Vol.24, Issue 4, 6 March 2009.&nbsp;<a href=\"http:\/\/iopscience.iop.org\/%200268-1242\/24\/4\/045010\">http:\/\/iopscience.iop.org\/ 0268-1242\/24\/4\/045010<\/a><\/li>\n\n\n\n<li>Latreche, M. LAKHDARA,&nbsp;<strong>M. Bouhouche<\/strong>, C. Gontrand, \u00ab&nbsp;Low temperature effect on electrical characteristics of SiGe, SiGeC HBT\u201d, Journal of optoelectronics and advanced materials \u2013 symposia, Vol. 1, N<sup>o<\/sup>.3, pp. 242 \u2013245,2009 .<\/li>\n\n\n\n<li><strong>Bouhouche<\/strong>, S. Latreche, C. Gontrand, \u2019Low Frequency Noise in SiGe Bipolar Transistor: Effect of Extrinsic Base Implantation Traps\u2019, International Journal of Computer Applications, Vol. 33, No. 6, November 2011, pp.59-64, DOI. 10.5120\/4147-5874,&nbsp;<a href=\"http:\/\/www.ijcaonline.org\/archives\/%20volume33\/%20number%206%20\/4147-5874\">http:\/\/www.ijcaonline.org\/archives\/ volume33\/ number 6 \/4147-5874<\/a>.<\/li>\n\n\n\n<li><strong>Bouhouche<\/strong>, S. Latreche, C. Gontrand, \u201cPhase Noise Modeling in LC Oscillators Implemented in SiGe Technology\u201d, Journal of semiconductors, Vol. 34, Issue 2, f\u00e9vrier 2013, DOI: 10.1088\/1674-4926\/34\/2\/025001,&nbsp;<a href=\"http:\/\/iopscience.iop.org\/1674-4926\/34\/2\/025001\">http:\/\/iopscience.iop.org\/1674-4926\/34\/2\/025001<\/a><\/li>\n<\/ul>\n\n\n\n<blockquote class=\"wp-block-quote is-layout-flow wp-block-quote-is-layout-flow\">\n<h3 class=\"wp-block-heading\"><strong>Base Scopus:<\/strong><\/h3>\n\n\n\n<p><a href=\"https:\/\/www.scopus.com\/authid\/detail.uri?authorId=26025960100\" target=\"_blank\" rel=\"noreferrer noopener\">Plus d\u2019information \u2026<\/a><\/p>\n<\/blockquote>\n","protected":false},"excerpt":{"rendered":"<p>\u0628\u0648\u062d\u0648\u0634 \u0645\u0646\u0627\u0644 \u0627\u0644\u0633\u064a\u0631\u0629 \u0627\u0644\u0630\u0627\u062a\u064a\u0629 Grade&nbsp;: MCA Email&nbsp;:&nbsp;bouhouche.manel@univ-oeb.dz \u0627\u0644\u0645\u0646\u0634\u0648\u0631\u0627\u062a: Les derni\u00e8res publications: Phase noise modeling in LC oscillators implemented in SiGe technology Effect of implantation defects and carbon incorporation on Si\/SiGe bipolar characteristics Mixed-mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals Christian Gontrand,&nbsp;Manel Bouhouche, Jos\u00e9CruzNu\u00f1ez Perez, Olivier Valorge, Francis Calmon, Jacques Verdierand Sa\u00efdaLatreche, \u201c&nbsp;Mixed-mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals\u201d,&nbsp;Wiley International Journal of Numerical Modelling: electronic networks and fields,&nbsp;22 Issue 1, January 2009, pp. 23-42&nbsp;www.interscience.wiley.com Jos\u00e9-Cruz Nunez-Perez, Maya Lakhdara,&nbsp;Manel Bouhouche, Jacques Verdier, SaidaLatreche and Christian Gontrand, \u201cFirst- and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors\u201d, International&nbsp;journalof Semiconductor Science and Technology; Semicond. Sci. Technol. Vol.24, Issue 4, 6 March 2009.&nbsp;http:\/\/iopscience.iop.org\/ 0268-1242\/24\/4\/045010 Latreche, M. LAKHDARA,&nbsp;M. Bouhouche, C. Gontrand, \u00ab&nbsp;Low temperature effect on electrical characteristics of SiGe, SiGeC HBT\u201d, Journal of optoelectronics and advanced materials \u2013 symposia, Vol. 1, No.3, pp. 242 \u2013245,2009 . Bouhouche, S. Latreche, C. Gontrand, \u2019Low Frequency Noise in SiGe Bipolar Transistor: Effect of Extrinsic Base Implantation Traps\u2019, International Journal of Computer Applications, Vol. 33, No. 6, November 2011, pp.59-64, DOI. 10.5120\/4147-5874,&nbsp;http:\/\/www.ijcaonline.org\/archives\/ volume33\/ number 6 \/4147-5874. Bouhouche, S. Latreche, C. Gontrand, \u201cPhase Noise Modeling in LC Oscillators Implemented in SiGe Technology\u201d, Journal of semiconductors, Vol. 34, Issue 2, f\u00e9vrier 2013, DOI: 10.1088\/1674-4926\/34\/2\/025001,&nbsp;http:\/\/iopscience.iop.org\/1674-4926\/34\/2\/025001 Base Scopus: Plus d\u2019information \u2026<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-1075","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/pages\/1075"}],"collection":[{"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/comments?post=1075"}],"version-history":[{"count":1,"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/pages\/1075\/revisions"}],"predecessor-version":[{"id":1077,"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/pages\/1075\/revisions\/1077"}],"wp:attachment":[{"href":"https:\/\/www.univ-oeb.dz\/ista\/wp-json\/wp\/v2\/media?parent=1075"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}